SI4931DY_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

SPICE Device Model Si4931DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −350 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −8.9 A
V_GS = −2.5 V, I_D = −8.1 A
V_GS = −1.8 V, I_D = −3.6 A
V_DS = −6 V, I_D = −8.9 A
I_S = −1.7 A, V_GS = 0 V
V_DS = −6 V, V_GS = −4.5 V, I_D = −8.9 A
V_DD = −6 V, R_L = 6 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.82
375
0.015
0.019
0.027
37
−0.80
0.015
0.018
0.023
26
−0.70
30
34.5
5.1
5.1
9.6
9.6
31
25
33
46
244
230
59
155
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72553
S-52446Rev. B, 28-Nov-05