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SI4927DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET | |||
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SPICE Device Model Si4927DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = â250 µA
VDS ⥠â5 V, VGS = â10 V
VDS = â10 V, VGS = â7.4 V
VGS = â4.5 V, ID = â5.8 A
VDS = â15 V, ID = â7.4 A
IS = â2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = â15 V, VGS = â10 V, ID = â7.4 A
VDD = â15 V, RL = 15 â¦
ID â
â1 A, VGEN = â10 V, RG = 6 â¦
IF = â2.1 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
Typical
1.91
242
0.017
0.038
15
0.78
39
8
7
14
9
43
47
50
Unit
V
A
â¦
S
V
nC
ns
www.vishay.com
2
Document Number: 70915
S-52575Rev. B, 02-Jan-06
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