SI4925DDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4925DDY
Vishay Siliconix
SPECIFICATIONS
(T
J
=
25°C
UNLESS
OTHERWISE
NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V
GS(th)
r
DS(on)
Forward Transconductance^a
g
fs
Diode Forward Voltage
V
SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V
DS
=
V,
GS
I
D
=
−250
μA
V_GS = −10 V, I_D = −7.3 A
V_GS = −4.5 V, I_D = −6.2 A
V_DS = −10 V, I_D = −9.1 A
I_S = −2 A
V = −15 V, V = 0 V, f = 1 MHz
DS
GS
V
DS
=
−15
V,
V
GS
=
−10
V,
I
D
=
−9.1
A
V = −15 V, V = −4.5 V, I = −9.1 A
DS
GS
D
Simulated Measured
Data
Data
1.7
0.023
0.038
19
−0.75
0.024
0.033
23
−0.75
1350
217
186
28
15
4
7.5
1350
215
185
32
15
4
7.5
Unit
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 64435
S-82531⎯Rev. A, 20-Oct-08