SI4913DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si4913DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = − 500 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −9.4 A
V_GS = −2.5 V, I_D = −8.4 A
V_GS = −1.8 V, I_D = −5 A
V_DS = −10 V, I_D = −9.4 A
I_S = −1.7 A, V_GS = 0 V
V_DS = −6 V, V_GS = −4.5 V, I_D = −9.4 A
V_DD = −6 V, R_L = 6 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
I_F = −1.7 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
0.75
235
0.0124
0.015
0.019
42
−0.80
0.0125
0.0155
0.020
40
−0.70
47
43
7.1
7.1
10.9
10.9
36
32
35
42
166
350
43
160
135
127
Unit
V
A
Ω
S
V
nC
ns
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Document Number: 70107
S-52287Rev. B, 31-Oct-05