SI4911DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si4911DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −8.4 A
V_GS = −2.5 V, I_D = −7.6 A
V_GS = −1.8 V, I_D = −3 A
V_DS = −10 V, I_D = − 8.4 A
I_S = −1.7 A, V_GS = 0 V
V_DS = −10 V, V_GS = −4.5 V, I_D = −8.4 A
V_DD = −10 V, R_L = 10 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.62
201
0.015
0.019
0.023
33
−0.80
0.015
0.018
0.023
35
−0.70
33
33
4
4
7.8
7.8
32
30
32
35
272
280
43
140
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72191
S-52285Rev. B, 31-Oct-05