SI4900DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SPICE Device Model Si4900DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Diode Forward Voltage ^a
Dynamic ^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.3 A
V_GS = 4.5 V, I_D = 3.9 A
V_DS = 15 V, I_D = 4.3 A
I_S = 1.7 A, V_GS = 0 V
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 4.3 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = 30 V, V_GS = 4.5 V, I_D = 4.3 A
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
2
V
105
A
0.046
0.046
Ω
0.057
0.059
16
15
S
0.80
0.80
V
732
665
65
75
pF
28
40
11
13
5.6
6
nC
2.3
2.3
2.6
2.6
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2
Document Number: 73237
S-50392Rev. A, 14-Mar-05