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SI4896DY_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET | |||
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SPICE Device Model Si4896DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 µA
VDS ⥠5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 6 V, ID = 8 A
VDS = 15 V, ID = 10 A
IS = 2.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 40 V, VGS = 10 V, ID = 10 A
VDD = 40 V, RL = 40 â¦
ID â
1 A, VGEN = 10 V, RG = 6 â¦
IF = 2.8 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
Typical
2.63
319
0.0127
0.0175
24
0.83
37.6
7.5
11
18
22
30
45
40
Unit
V
A
â¦
S
V
nC
ns
www.vishay.com
2
Document Number: 71562
S-60072Rev. B, 23-Jan-06
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