SI4888DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

SPICE Device Model Si4888DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 16 A
V_GS = 4.5 V, I_D = 13 A
V_DS = 15 V, I_D = 16 A
I_S = 3 A, V_GS = 0 V
V_DS = 15 V, V_GS = 5 V, I_D = 16 A
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 3 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.1
838
0.0054
0.0080
49
0.74
0.0058
0.0080
38
0.74
16
16.3
4
4
5.9
5.9
12
14
10
10
28
44
26
20
32
40
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 71714
S-60245Rev. B, 20-Feb-06