SI4835BDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4835BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "25 V
V_DS = - 24 V, V_GS = 0 V
V_DS = - 24 V, V_GS = 0 V, T_J = 55_C
V_DS v - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 9.6 A
V_GS = - 4.5 V, I_D = - 7.5 A
V_DS = - 15 V, I_D = - 9.6 A
I_S = - 2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = - 15 V, V_GS = - 5 V, I_D = - 9.6 A
V_DD = - 15 V, R_L = 15 W
I_D ^ - 1 A, V_GEN = - 10 V, R_G = 6 W
I_F = - 2.1 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
- 1.0
- 3.0
V
"100
nA
-1
mA
-5
- 50
A
0.014
0.018
W
0.023
0.030
30
S
- 0.8
- 1.2
V
25
37
6.5
nC
12.5
1.0
2.9
4.9
W
15
25
13
20
60
100
ns
45
70
45
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 5 V
40
4V
30
20
10
0
0
3V
1
2
3
4
5
6
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
T_C = - 55_C
40
25_C
125_C
30
20
10
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72029
S-31062—Rev. C, 26-May-03