SI4720 Datasheet, PDF (2/10 Pages) Silicon Laboratories – Broadcast FM Radio Transceiver for Portable Applications

Si4720
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Limit
Unit
Voltage Referenced to GND V_S, V_Da
V_SD
V_IN1, V_IN2
V_GS
Storage Temperature
- 0.3 to 32
- 0.3 to 30
V
- 0.3 to 15
20
- 55 to 150
°C
Power Dissipation^b
t = 10 s
t = Steady State
2.5
W
1.5
Notes:
a. V_SD  30 V_DC.
b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
V_S, V_D
V_IN1, V_IN2
I_DS
Operating Temperature Range
Junction Temperature
Symbol
Limit
Unit
6 to 30
V
0 to 13.2
0 to 6
A
- 25 to 85
°C
- 25 to 150
This device has a maximum recommended operating junction temperature of 85 °C. This temperature limit is used for electrical specifications such as logic transition
voltages only and is not a reliability limit. The device can be used with junction temperatures up to 150 °C if relaxed specifications can be tolerated, although limits for
these specifications may not be given. Performance curves can be used to give an indication of specifications at higher temperatures, but are not guaranteed.
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
Temp.^a
Limits
Min.^b
Typ.^c
Max.^b
Unit
On-Resistance
r_DS
V_S = 10 V, I_D = 1 A, V_IN = H
Room
0.0155 0.020

Leakage Current
I_DS(off)
V_DS = 10 V
Room
1
Supply Current
I_S(off)
I_S(on)
V_S = 21 V
Room
Room
1
µA
1.1
6
Input Voltage Low
Input Voltage High
V_INL
V_INH
V_S = 10 and V_S = 21
Full
Full
2.5
1
V
Input Leakage Current
I_INH
V_IN = 5 V
Full
5
µA
Turn-On Delay
Turn-Off Delay
IN
to D or S
Break-Before-Make^d
t_ON(IN)
t_OFF(IN)
t_BBM
V_S = 10 V, R_L = 5 , Figure 1
Room
2.2
2.9
10
Room
Room
1.5
2.1
µs
1.05
Rise Time
Fall Time
t_RISE
t_FALL
V_S = 10 V, R_L = 5 , Figure 1
Room
Room
1.3
2.5
50
100
ns
Voltage Across pin 6 and 7
V_GS
Forward Diode
V_SD
V_S = 30
I_D = - 1 A
Room
Room
10.2
18
V
1.1
Notes:
a. Room = 25 °C, full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production testing.
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Document Number: 70664
2
S11-1185-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000