SI4700DY Datasheet, PDF (2/8 Pages) Vishay Siliconix – Power Selector Switch

Si4700DY
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
Logic Control Input
Continuous Drain Current^a
Pulsed Drain Current^b
Q1
Q2
V_DS
V_IN
Q1
Q2
I_D
Q1
I_DM
Q2
12
–12
8
7.6
5.3
5.0
3.5
20
20
Continuous Intrinsic Diode Conduction^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
ESD Voltage^c
Q1
I_S
Q2
P_D
T_j, T_stg
ESD
2.1
1.15
2.1
1.15
2.35
1.25
–55 to 150
3
Notes
a. Surface mounted on 1” x1” FR4 board.
b. Pulse test: pulse width v300 mS, duty cycle v2%.
c. Equivalent to MIL-STD-883D Human Body Model (100 pF, 1500 W)
Unit
V
A
W
_C
KV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)^b
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
43
82
25
Maximum
53
100
30
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Junction-to-foot thermal impedance represents the effective thermal impedance of all heat carrying leads in parallel and is intended for use in conjunction with
the thermal impedance of the PC board pads to ambient (R_thJA = R_thJF + R_thPCB-A). It can also be used to estimate chip temperature if power dissipation and
the lead temperature of a heat carrying (drain) lead is known.
SPECIFICATIONS
Parameter
Symbol
Specific Test Conditions
Off State Leakage Current
Gate-Body Leakage
Gate-Threshold Voltage
On-Resistance
I_DSS
I_GSS
V_GS(th)
r_DS(on)
V_DS = –12 V, V_GS = 0 V
V_DS = –8 V, V_GS = 0 V
V_DS = –12 V, V_GS = 0 V, T_J = 55_C
V_DS = 0 V, V_GS = "4.5 V
V_DS = V_GS, I_D = 250 mA
V_S = 4.5 V, I_D = 1 A, V_ON/OFF = 2.5 V
V_S = 2.5 V, I_D = 1 A, V_ON/OFF = 2.5 V
V_S = 4.5 V, I_D = 1 A, V_ON/OFF = 2.5 V
V_S = 2.5 V, I_D = 1 A, V_ON/OFF = 2.5 V
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
www.vishay.com S FaxBack 408-970-5600
2-2
Limits
Min Typ^a Max Unit
Q1
1
Q2
–1
Q3
1
mA
Q2
–5
Q3
"1
Q3
0.6
V
Q1
25
30
Q1
32
40
mW
Q2
58
70
Q2
90
110
Document Number: 71110
S-00025—Rev. A, 24-Jan-00