SI4684DY Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4684DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 12 A
V_GS = 4.5 V, I_D = 9.5 A
V_DS = 15 V, I_D = 12 A
I_S = 2.3 A
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 11 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = 15 V, V_GS = 4.5 V, I_D = 11 A
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
0.82
V
598
A
0.0078
0.0078
Ω
0.0094
0.0092
34
45
S
0.82
0.70
V
2111
2080
348
340
pF
99
135
30
30
14
14
nC
3
3
2.8
2.8
www.vishay.com
2
Document Number: 73360
S-50586Rev. A, 04-Apr-05