SI4670DY Datasheet, PDF (2/15 Pages) Vishay Siliconix – Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode

Si4670DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_DS
ΔV_DS/T_J
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 16 V
V_DS = 0 V, V_GS = ± 16 V
V_DS = 25 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 25 V, V_GS = 0 V
V_DS = 25 V, V_GS = 0 V, T_J = 100 °C
V_DS = 25 V, V_GS = 0 V, T_J = 100 °C
On-State Drain Current^b
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 7 A
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 7 A
V_GS = 4.5 V, I_D = 6.3 A
V_GS = 4.5 V, I_D = 6.3 A
Forward Transconductance^b
g_fs
V_DS = 10 V, I_D = 7 A
V_DS = 10 V, I_D = 7 A
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 13 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 13 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 13 V, V_GS = 10 V, I_D = 7 A
Q_g
V_DS = 13 V, V_GS = 10 V, I_D = 7 A
Channel-1
V_DS = 13 V, V_GS = 4.5 V, I_D = 7 A
Q_gs
Channel-2
Q_gd
V_DS = 13 V, V_GS = 4.5 V, I_D = 7 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. ^Typ.a Max. Unit
Ch-1 25
V
Ch-2 25
Ch-1
Ch-1
25
- 4.7
mV/°C
Ch-1 1
Ch-2 1
2.2
V
2.2
Ch-1
Ch-2
100
nA
100
Ch-1
0.001
Ch-2
Ch-1
0.07 0.5
mA
0.025
Ch-2
5
20
Ch-1 20
A
Ch-2 20
Ch-1
0.019 0.023
Ch-2
Ch-1
0.019 0.023
Ω
0.023 0.028
Ch-2
0.023 0.028
Ch-1
23
S
Ch-2
23
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
680
680
120
pF
180
55
70
12
18
12
18
5.5 8.5
5.5
8.5
nC
2
2
1.5
1.5
2.5
Ω
3.2
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2
Document Number: 69595
S09-2109-Rev. C, 12-Oct-09