SI4532ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4532ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
VGS(th)
ID(on)
Drain-Source On-State Resistance^a
rDS(on)
Forward Transconductance^a
gfs
Diode Forward Voltage^a
VSD
Dynamic^b
VDS = VGS, ID = 250 µA
VDS = VGS, ID = −250 µA
VDS ≥ 5 V, VGS = 10 V
VDS ≤ −5 V, VGS = −10 V
VGS = 10 V, ID = 4.9 A
VGS = −10 V, ID = −3.9 A
VGS = 4.5 V, ID = 4.1 A
VGS = −4.5 V, ID = −3 A
VDS = 15 V, ID = 4.9 A
VDS = −15 V, ID = −2.5 A
IS = 1.7 A, VGS = 0 V
IS = −1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 4.9 A
Qgs
P-Channel
VDS = −10 V, VGS = −10 V, ID = −3.9 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD =10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
P-Channel
VDD = −10 V, RL = 10 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
IS = 1.7 A, di/dt = 100 A/µs
IS = −1.7 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.8
2.2
110
62
0.042
0.071
0.057
0.120
9.2
5
0.70
−0.80
V
A
0.044
0.062
Ω
0.062
0.105
11
S
5
0.80
V
−0.82
N-Ch
7.4
P-Ch
9.6
N-Ch
1.4
P-Ch
2
N-Ch
1.2
P-Ch
1.9
N-Ch
8
P-Ch
12
N-Ch
10
P-Ch
14
N-Ch
13
P-Ch
16
N-Ch
17
P-Ch
22
N-Ch
24
P-Ch
30
8
10
1.4
Nc
2
1.2
1.9
12
8
10
9
23
Ns
21
8
10
25
27
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Document Number: 70551
16-May-04