SI4501ADY Datasheet, PDF (2/2 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET Half-Bridge

Specification Comparison
Vishay Siliconix
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Si4501ADY
Parameter
Symbol Channel Min
Typ
Max
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Ch
P-Ch
Qgs
N-Ch
P-Ch
Qgd
N-Ch
P-Ch
11.5
20
13.5
20
3
2.2
4
3
Switching
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
t_d(on)
t_r
t_d(off)
t_f
t_rr
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
22
21
40
8
15
45
70
35
50
60
100
10
20
55
85
30
60
50
100
Si4501DY
Min Typ Max Unit
4.5
20
15
25
3.3
3.0
nC
6.6
2.0
13
20
20
40
9
18
50
100
35
110
50
220
ns
17
30
60
120
35
70
60
100
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2
Document Number: 72891
14-Jun-04