SI4488DY_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

SPICE Device Model Si4488DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
V_DS = 15 V, I_D = 5 A
I_S = 2.8 A, V_GS = 0 V
V_DS = 75 V, V_GS = 10 V, I_D = 5 A
V_DD = 75 V, R_L = 15 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 2.8 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
3.1
114
0.043
24
0.76
0.041
18
0.75
31
30
8.5
8.5
8.5
8.5
11
12
21
7
39
22
41
10
37
40
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 71684
S-60245Rev. B, 20-Feb-06