SI4486EY_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SPICE Device Model Si4486EY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 7.9 A
V_GS = 6 V, I_D = 7.5 A
V_DS = 15 V, I_D = 7.9 A
I_S = 3.1 A, V_GS = 0 V
Total Gate Charg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 50 V, V_GS = 10 V, I_D = 7.9 A
V_DD = 50 V, R_L = 50 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 3.1 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
b. Guaranteed by design, not subject to production testing.
Typical
2.88
240
0.021
0.022
40
0.74
40
10
8.6
24
30
36
69
49
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 71465
S-60075Rev. B, 23-Jan-06