SI4483ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4483ADY
Vishay Siliconix
SPECIFICATIONS (T = 25 °C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V_GS(th)
R
DS(on)
Forward Transconductance^a
g
fs
Diode Forward Voltage
V
SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V = V , I = - 250 μA
DS
GS D
V = - 10 V, I = - 10 A
GS
D
V = - 4.5 V, I = - 7 A
GS
D
V = - 10 V, I = - 10 A
DS
D
I =-3A
S
V = - 15 V, V = 0 V, f = 1 MHz
DS
GS
V = - 15 V, V = - 10 V, I = - 10 A
DS
GS
D
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 10 A
Simulated Measured
Data
Data
2
0.0070
0.0141
28
- 0.72
0.0073
0.0127
32
- 0.72
3860
711
640
81
44
12.2
21.7
3900
715
645
90
44.8
12.2
21.7
Unit
V
Ω
S
V
pF
nC
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2
Document Number: 64645
S-82897-Rev. A, 15-Dec-08