SI4465ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

SPICE Device Model Si4465ADY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = −250 µA
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −14 A
V_GS = −2.5 V, I_D = −12 A
V_GS = −1.8 V, I_D = −10 A
V_DS = −10 V, I_D = −14 A
I_S = −2.1 A
V_DS = −4 V, V_GS = −4.5 V, I_D = −14 A
Simulated Measured
Data
Data
0.61
410
0.0074
0.0092
0.012
43
−0.82
0.0075
0.0092
0.013
58
−0.57
49
55
6
6
10
10
Unit
V
A
Ω
S
V
nC
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Document Number: 74212
S-61686Rev. A, 01-Jan-07