SI4464DY_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

SPICE Device Model Si4464DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 2.2 A
V_GS = 6 V, I_D = 2.1 A
V_DS = 15 V, I_D = 2.2 A
I_S = 2.1 A, V_GS = 0 V
V_DS = 100 V, V_GS = 10 V, I_D = 2.2 A
V_DD = 100 V, R_L = 100 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 2.1 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.9
26
0.192
0.199
6.1
0.74
0.195
0.210
8
0.8
13
12
2.5
2.5
3.8
3.8
14
10
12
12
8
15
10
15
53
60
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72172
S-51095Rev. B, 13-Jun-05