SI4462DY_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

SPICE Device Model Si4462DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 1.5 A
V_GS = 6 V, I_D = 1.45 A
I_S = 2.1 A, V_GS = 0 V
V_DS = 100 V, V_GS = 10 V, I_D = 1.5 A
V_DD = 100 V, R_L = 100 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 2.1 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.6
13
0.37
0.39
0.40
0.42
0.81
0.80
5.7
6
0.90
0.90
1.9
1.9
10
10
12
12
10
10
6
15
60
55
Unit
V
A
Ω
V
nC
ns
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2
Document Number: 72166
S-51095Rev. B, 13-June-05