SI4459ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4459ADY
Vishay Siliconix
SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V
GS(th)
r
DS(on)
Forward Transconductance^a
g
fs
Diode Forward Voltage
V
SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V = V , I = −250 μA
DS
GS D
V_GS = −10 V, I_D = −15 A
V_GS = −4.5 V, I_D = −10 A
V_DS = −10 V, I_D = −15 A
I_S = −3 A
V = −15 V, V = 0 V, f = 1 MHz
DS
GS
V = −15 V, V = −10 V, I = −20 A
DS
GS
D
V = −15 V, V = −4.5 V, I = −20 A
DS
GS
D
Simulated Measured
Data
Data
1.7
0.0038
0.0062
37
−0.70
0.0039
0.0062
24
−0.71
6043
893
768
116
62
16.5
23.5
6000
860
790
129
61
16.5
23.5
Unit
V
Ω
S
V
pF
nC
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2
Document Number: 68446
S-81895⎯Rev. A, 25-Aug-08