SI4435BDY Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4435BDY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −9.1 A
V_GS = −4.5 V, I_D = −6.9 A
V_DS = −10 V, I_D = −9.1 A
I_S = −2.1 A, V_GS = 0 V
V_DS = −15 V, V_GS = −10 V, I_D = −9.1 A
V_DD = −15 V, R_L = 15 Ω
I_D ≅ −1 A, V_GEN = −10 V, R_G = 6 Ω
I_F = −2.1 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.9
309
0.015
0.025
22
−0.81
0.015
0.025
24
−0.80
32
33
5.8
5.8
8.6
8.6
19
10
14
15
184
110
35
70
55
60
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 72297
S-51095Rev. B, 13-Jun-05