SI4394DY_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4394DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 4.5 V, I_D = 14 A
V_DS = 15 V, I_D = 15 A
I_S = 2.9 A, V_GS = 0 V
V_DS = 15 V, V_GS = 4.5 V, I_D = 15 A
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.96
735
0.0066
0.0079
48
0.83
0.0066
0.0077
65
0.73
12.6
12.5
3.9
3.9
2.1
2.1
12
13
7
8
48
48
24
13
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72764
S-51095Rev. B, 13-Jun-05