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SI3983DV Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET | |||
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Si3983DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = â250 mA
VDS = 0 V, VGS = "8 V
VDS = â20 V, VGS = 0 V
VDS = â20 V, VGS = 0 V, TJ = 85_C
VDS = â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â2.5 A
VGS = â2.5 V, ID = â2.0 A
VGS = â1.8 V, ID = â1.0 A
VDS = â5 V, ID = â2.5 A
IS = â1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = â10 V, VGS = â4.5 V, ID = â2.5 A
VDD = â10 V, RL = 10 W
ID ^ â1 A, VGEN = â4.5 V, Rg = 6 W
IF = â1.05 A, di/dt = 100 A/ms
Min
Typ
Max Unit
â0.40
â1.1
V
"100
nA
â1
mA
â10
â5
A
0.086
0.110
0.116
0.145
W
0.170
0.220
6
S
â0.8
â1.1
V
5
7.5
0.68
nC
1.30
28
45
55
85
55
85
ns
32
50
25
40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
7
VGS = 5 thru 2.5 V
6
2V
5
4
3
2
1.5 V
1
0
0
1
2
3
4
5
VDS â Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
8
7
TC = â55_C
6
25_C
5
125_C
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS â Gate-to-Source Voltage (V)
Document Number: 72316
S-40575âRev. C, 29-Mar-04
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