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| SI2301BDS Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET | |||
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Si2301BDS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = - 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55_C
VDS v - 5 V, VGS = - 4.5 V
VDS v - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 2.8 A
VGS = - 2.5 V, ID = - 2.0 A
VDS = - 5 V, ID = - 2.8 A
IS = - 0.75 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 6 V, VGS = - 4.5 V
ID ^ - 2.8 A
VDS = - 6 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 W
ID ^ - 1.0 A, VGEN = - 4.5 V
RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
Limits
Min
Typ
Max
Unit
- 20
- 0.45
V
- 0.95
"100
nA
-1
mA
- 10
-6
A
-3
0.080
0.100
W
0.110
0.150
6.5
S
- 0.80
- 1.2
V
4.5
10
0.7
nC
1.1
375
95
pF
65
20
30
40
60
ns
30
45
20
30
www.vishay.com
2
Document Number: 72066
S-31990âRev. B, 13-Oct-03
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