SD800C24L_12 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 1200 A

SD800C..L Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version),
1200 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
Maximum forward voltage drop
V_FM
TEST CONDITIONS
SD800C..L
UNITS
24 TO 36 40 TO 45
180° conduction, half sine wave
Double side (single side) cooled
1180 (550) 1065 (490) A
55 (85) 55 (85)
°C
25 °C heatsink temperature double side cooled
2280
2040
t = 10 ms
t = 8.3 ms
No voltage
reapplied
13 600 12 200
14 240 12 800
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % V_RRM
reapplied
No voltage
reapplied
50 % V_RRM
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
11 440
11 980
925
845
654
597
10 250
10 750
745
680
526
480
kA²s
t = 0.1 to 10 ms, no voltage reapplied
9250
7450
kA²âˆšs
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
0.90
1.06
V
(I > π x I_F(AV)), T_J = T_J maximum
1.10
1.18
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
0.38
0.34
0.44
mΩ
0.41
I_pk = 2000 A, T_J = T_J maximum,
t_p = 10 ms sinusoidal wave
1.66
1.95
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 150
°C
- 55 to 200
0.073
K/W
0.031
14 700 (1500)
N (kg)
255
g
DO-200AB (B-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
T_J = T_J maximum
K/W
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 93553
Revision: 14-May-08