SD400C04C Datasheet, PDF (2/7 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 800 A

SD400C..C Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version), 800 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at heatsink temperature
I_F(AV)
180° conduction, half sine wave
Double side (single side) cooled
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I_F(RMS)
I_FSM
I²t
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
50 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 1930 A, T_J = T_J maximum, t_p = 10 ms sinusoidal wave
VALUES
800 (425)
55 (85)
1435
8250
8640
6940
7265
340
311
241
220
3400
0.80
0.83
0.55
0.53
1.86
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link on page 5
VALUES
UNITS
- 40 to 190
°C
- 55 to 200
0.163
K/W
0.073
4900 (500)
N (kg)
70
g
DO-200AA
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.017
0.018
0.011
0.012
120°
0.020
0.020
0.020
0.020
90°
0.025
0.025
0.027
0.027
T_J = T_J maximum
60°
0.037
0.036
0.038
0.038
30°
0.064
0.062
0.065
0.062
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
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Document Number: 93547
Revision: 05-Mar-08