SD300C04C_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 650 A

SD300C..C Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version), 650 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level values of forward
slope resistance
High level values of forward
slope resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
SD300C..C
04 TO 20 25 TO 32
180° conduction, half sine wave
Double side (single side) cooled
650 (380) 540 (250)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
1150
995
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
6050
6335
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
5090
5330
183
167
t = 10 ms _{100 % VRRM}
129
t = 8.3 ms ^reapplied
118
t = 0.1 to 10 ms, no voltage reapplied
1830
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
0.95
1.00
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
0.75
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 1500 A, T_J = T_J maximum;
t_p = 10 ms sinusoidal wave
0.72
2.08
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
SD300C..C
UNITS
04 TO 20 25 TO 32
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
- 40 to 180 - 40 to 150
°C
- 55 to 200
0.163
K/W
0.073
Mounting force, ± 10 %
4900 (500)
N (kg)
Approximate weight
70
g
Case style
See dimensions - link at the end of datasheet
DO-200AA
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.017
0.017
0.011
0.012
120°
0.020
0.020
0.020
0.020
90°
0.025
0.025
0.027
0.027
T_J = T_J maximum
60°
0.036
0.036
0.038
0.038
30°
0.064
0.062
0.065
0.062
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
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Document Number: 93544
Revision: 14-May-08