SD2000C04L Datasheet, PDF (2/6 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 2100 A

SD2000C..L Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version),
2100 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
I_F(AV)
Maximum RMS forward current
I_F(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 6000 A, T_J = T_J maximum, t_p = 10 ms sinusoidal wave
VALUES
2100 (1040)
55 (85)
3900
23 900
25 000
20 100
21 000
2857
2608
2020
1844
28 570
0.74
0.86
0.13
0.12
1.55
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 180
°C
- 55 to 200
0.073
K/W
0.031
14 700
N
(1500)
(kg)
255
g
DO-200AB (B-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
T_J = T_J maximum
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
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Document Number: 93540
Revision: 14-May-08