SD1700C24K_12 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 2100 A

SD1700C..K Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version),
2100 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
I_F(AV)
I_F(RMS)
Maximum peak, one cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
SD1700C..K
UNITS
24 TO 36 40 TO 45
180° conduction, half sine wave
Double side (single side) cooled
2080
1875
(1000)
(920)
A
55 (85) 55 (85) °C
25 °C heatsink temperature double side cooled
3600
3280
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
24 000 20 000
25 150 20 950
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % V_RRM
reapplied
No voltage
reapplied
50 % V_RRM
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
20 200
21 150
2890
2630
2040
1860
16 800
17 600
2000
1826
1415
1292
kA²s
t = 0.1 to 10 ms, no voltage reapplied
28 900 20 000 kA²âˆšs
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum 0.89
0.88
V
(I > π x I_F(AV)), T_J = T_J maximum
1.02
0.99
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum 0.23
(I > π x I_F(AV)), T_J = T_J maximum
0.21
0.31
mΩ
0.29
I_pk = 4000 A, T_J = T_J maximum,
t_p = 10 ms sinusoidal wave
1.81
2.11
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
- 40 to 150
°C
- 55 to 200
0.042
K/W
0.020
Mounting force, ± 10 %
22 250 (2250)
N (kg)
Approximate weight
425
g
Case style
See dimensions - link at the end of datasheet
DO-200AC (K-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.002
0.002
0.001
0.001
120°
0.002
0.002
0.002
0.002
90°
0.003
0.003
0.003
0.003
T_J = T_J maximum
60°
0.004
0.004
0.004
0.004
30°
0.007
0.007
0.007
0.007
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
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Document Number: 93539
Revision: 14-May-08