SD103AWS-G Datasheet, PDF (2/5 Pages) Sensitron – SCHOTTKY BARRIER SWITCHING DIODE

www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
V_R = 30 V
SD103AWS-G
I_R
V_R = 20 V
SD103BWS-G
I_R
V_R = 10 V
SD103CWS-G
I_R
I_F = 20 mA
V_F
I_F = 200 mA
V_F
V_R = 0 V, f = 1 MHz
C_D
I_F = I_R = 50 mA to 200 mA,
recover to 0.1 I_R
t_rr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
100
10
1
0.1
0.01
0
18488
0.2
0.4 0.6
0.8 1.0
V_F - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
1000
100
10
1
0.1
T_amb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
V_R - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
4
t_p = 300 ms
duty cycle = 2 %
3
2
1
0
0
0.5
1.0
1.5
18489
V_F - Forward Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
100
10
1
0
18491
10
20
30
40 50
V_R - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.4, 21-Nov-13
2
Document Number: 81142
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000