SD103AW-G Datasheet, PDF (2/4 Pages) Vishay Siliconix – For general purpose applications

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SD103AW-G, SD103BW-G, SD103CW-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
V_R = 30 V
SD103AW-G
I_R
Leakage current
V_R = 20 V
SD103BW-G
I_R
V_R = 10 V
SD103CW-G
I_R
Forward voltage drop
I_F = 20 mA
V_F
I_F = 200 mA
V_F
Diode capacitance
V_R = 0 V, f = 1 MHz
C_D
Reverse recovery time
I_F = I_R = 50 mA to 200 mA,
recover to 0.1 I_R
t_rr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
100
10
1
0.1
0.01
0
18488
0.2
0.4 0.6
0.8 1.0
V_F - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
1000
100
10
1
0.1
T_amb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0
20084
5 10 15 20 25 30 35 40 45 50
V_R - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current
at Various Temperatures
5
4
t_p = 300 ms
duty cycle = 2 %
3
2
1
0
0
0.5
1.0
1.5
18489
V_F - Forward Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
100
10
1
0
18491
10
20
30
40
50
V_R - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.7, 25-Aug-16
2
Document Number: 85160
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