SD101A_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD101A, SD101B, SD101C
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
- 65 to + 150
°C
Thermal resistance junction to ambient air
R_thJA
320¹⁾
K/W
1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage
I_R = 10 µA
Leakage current
V_R = 50 V
V_R = 40 V
V_R = 30 V
Forward voltage drop
I_F = 1 mA
I_F = 15 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
V_R = 0 V, f = 1 MHz
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
100
T_j = 125 °C
10
T_j = 100 °C
1
T_j = 75 °C
T_j = 50 °C
0.1
T_j = 25 °C
0.01
0 5 10 15 20 25 30 35 40 45 50
16204
V_R - Reverse Voltage (V)
Figure 1. Reverse Current vs. Reverse Voltage
Part Symbol Min.
Typ.
Max.
Unit
SD101A V_(BR)
60
V
SD101B V_(BR)
50
V
SD101C V_(BR)
40
V
SD101A
I_R
200
nA
SD101B
I_R
200
nA
SD101C
I_R
200
nA
SD101A
V_F
410
mV
SD101B
V_F
400
mV
SD101C
V_F
390
mV
SD101A
V_F
1000
mV
SD101B
V_F
950
mV
SD101C
V_F
900
mV
SD101A
C_D
2.0
pF
SD101B
C_D
2.1
pF
SD101C
C_D
2.2
pF
2.0
1.8
T_j = 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 5 10 15 20 25 30 35 40 45 50
16205
V_R - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
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For technical questions within your region, please contact one of the following: Document Number 85629
[e-mail], [e-mail], [e-mail] _{Rev. 1.6, 23-Jul-10}