SD101A_07 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD101A/101B/101C
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage I_R = 10 µA
Leakage current
Forward voltage drop
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1 mA
I_F = 15 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
V_R = 0 V, f = 1 MHz
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
100
T_j = 125 °C
10
T = 100 °C
j
1
T
j
=
75
°C
T_j = 50 °C
0.1
T_j = 25 °C
0.01
0
16204
5 10 15 20 25 30 35 40 45 50
V_R - Reverse Voltage (V)
Figure 1. Reverse Current vs. Reverse Voltage
Part
Symbol
Min
SD101A V_(BR)
60
SD101B V_(BR)
50
SD101C V_(BR)
40
SD101A
I_R
SD101B
I_R
SD101C
I_R
SD101A
V_F
SD101B
V_F
SD101C
V_F
SD101A
V_F
SD101B
V_F
SD101C
V_F
SD101A
C_D
SD101B
C_D
SD101C
C_D
Typ.
Max
Unit
V
V
V
200
nA
200
nA
200
nA
410
mV
400
mV
390
mV
1000
mV
950
mV
900
mV
2.0
pF
2.1
pF
2.2
pF
2.0
1.8
T_j = 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16205
5 10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
R
Figure 2. Diode Capacitance vs. Reverse Voltage
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2
Document Number 85629
Rev. 1.5, 01-Mar-07