SD101AWS Datasheet, PDF (2/4 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

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SD101AWS, SD101BWS, SD101CWS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
I_R = 10 μA
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1 mA
I_F = 15 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 5 mA,
recover to 0.1 I_R
SD101AWS
V_(BR)
60
SD101BWS
V_(BR)
50
SD101CWS
V_(BR)
40
SD101AWS
I_R
SD101BWS
I_R
SD101CWS
I_R
SD101AWS
V_F
SD101BWS
V_F
SD101CWS
V_F
SD101AWS
V_F
SD101BWS
V_F
SD101CWS
V_F
SD101AWS
C_D
SD101BWS
C_D
SD101CWS
C_D
t_rr
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
10
100
A
B
125 °C
C
10
100 °C
1
1
75 °C
TYP.
MAX.
200
200
200
410
400
390
1000
950
900
2.0
2.1
2.2
1
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
ns
ns
ns
ns
0.1
50 °C
0.1
25 °C
0.01
0
0.2
0.4 0.6 0.8 1.0
18477
V_F - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
100
A
B
80
C
60
40
20
0
0
0.2
0.4 0.6 0.8 1.0
18478
V_F - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
0.01
0
10
20
30
40
50
18479
V_R - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
2.0
1.8
T_j = 25 °C
1.6
1.4
1.2
A
B
C
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40 50
18480
V_R - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 2.1, 14-Oct-16
2
Document Number: 85680
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