SD101AWS-V_10 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD101AWS-V, SD101BWS-V,
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
R_thJA
650¹⁾
K/W
Junction temperature
T_j
125¹⁾
°C
Storage temperature range
T_stg
- 65 to + 150
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 10 µA
Leakage current
V_R = 50 V
V_R = 40 V
V_R = 30 V
Forward voltage drop
I_F = 1 mA
I_F = 15 mA
Junction capacitance
V_R = 0 V, f = 1 MHz
Reverse recovery time
I_F = I_R = 5 mA,
recover to 0.1 I_R
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
10
A
B
C
1
Part
Symbol Min
SD101AWS-V
V_(BR)
60
SD101BWS-V
V_(BR)
50
SD101CWS-V V_(BR)
40
SD101AWS-V
I_R
SD101BWS-V
I_R
SD101CWS-V
I_R
SD101AWS-V
V_F
SD101BWS-V
V_F
SD101CWS-V
V_F
SD101AWS-V
V_F
SD101BWS-V
V_F
SD101CWS-V
V_F
SD101AWS-V
C_D
SD101BWS-V
C_D
SD101CWS-V
C_D
t_rr
Typ.
Max
Unit
V
V
V
200
nA
200
nA
200
nA
410
mV
400
mV
390
mV
1000
mV
950
mV
900
mV
2.0
ns
2.1
ns
2.2
ns
1
ns
100
A
B
80
C
60
0.1
40
20
0.01
0
0.2
0.4 0.6 0.8 1.0
18477
V_F - Forward Voltage (V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
0
0
0.2
0.4 0.6 0.8 1.0
18478
V_F - Forward Voltage (V)
Figure 2. Typical Forward Conduction Curve
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2
For technical questions within your region, please contact one of the following: Document Number 85680
[e-mail], [e-mail], [e-mail] _{Rev. 1.7, 05-Aug-10}