SD101AW-V Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD101AW-V/101BW-V/101CW-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
R_thJA
T_j
T_stg
300¹⁾
125¹⁾
- 65 to + 150
K/W
°C
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 10 µA
Leakage current
Forward voltage drop
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1 mA
I_F = 15 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
Reverse recovery time
I_F = I_R = 5 mA,
recover to 0.1 I_R
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Part
Symbol Min
SD101AW-V V_(BR)
60
SD101BW-V V_(BR)
50
SD101CW-V V_(BR)
40
SD101AW-V
I_R
SD101BW-V
I_R
SD101CW-V
I_R
SD101AW-V
V_F
SD101BW-V
V_F
SD101CW-V
V_F
SD101AW-V
V_F
SD101BW-V
V_F
SD101CW-V
V_F
SD101AW-V
C_D
SD101BW-V C_D
SD101CW-V C_D
t_rr
Typ.
Max
Unit
V
V
V
200
nA
200
nA
200
nA
410
mV
400
mV
390
mV
1000
mV
950
mV
900
mV
2.0
pF
2.1
pF
2.2
pF
1
10
A
B
C
1
0.1
0.01
0
0.2
0.4 0.6 0.8 1.0
18477
V_F - Forward Voltage (V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
100
A
B
80
C
60
40
20
0
0
18478
0.2
0.4 0.6
0.8 1.0
V_F - Forward Voltage (V)
Figure 2. Typical Forward Conduction Curve
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2
Document Number 85679
Rev. 1.5, 15-Sep-06