SD101AW-G Datasheet, PDF (2/4 Pages) Vishay Siliconix – For general purpose applications

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SD101AW-G, SD101BW-G, SD101CW-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
SD101AW-G
V_(BR)
60
I_R = 10 μA
SD101BW-G
V_(BR)
50
SD101CW-G
V_(BR)
40
V_R = 50 V
SD101AW-G
I_R
V_R = 40 V
SD101BW-G
I_R
V_R = 30 V
SD101CW-G
I_R
SD101AW-G
V_F
I_F = 1 mA
SD101BW-G
V_F
SD101CW-G
V_F
SD101AW-G
V_F
I_F = 15 mA
SD101BW-G
V_F
SD101CW-G
V_F
SD101AW-G
C_D
V_R = 0 V, f = 1 MHz
SD101BW-G
C_D
SD101CW-G
C_D
I_F = I_R = 5 mA, recover to 0.1 I_R
t_rr
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
MAX.
200
200
200
410
400
390
1000
950
900
2
2.1
2.2
1
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
pF
ns
10
A
B
C
1
0.1
0.01
0
18477
0.2
0.4 0.6
0.8 1.0
V_F - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
100
125 °C
10
100 °C
1
75 °C
50 °C
0.1
25 °C
0.01
0
18479
10
20
30
40 50
V_R - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
A
B
80
C
60
40
20
0
0
18478
0.2
0.4 0.6
0.8 1.0
V_F - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
18480
Tj = 25 °C
A
B
C
10
20
30
40 50
V_R - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
Rev. 1.0, 25-Feb-13
2
Document Number: 85158
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