SD101A Datasheet, PDF (2/5 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD101A / 101B / 101C
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Junction temperature
Storage temperature range
Junction to ambient air
Test condition
1) Valid provided that electrodes are kept at ambient temperature.
Symbol
T_j
T_stg
R_thJA
Value
125
- 65 to + 150
320¹⁾
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage I_R = 10 µA
Leakage current
Forward voltage drop
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1 mA
I_F = 15 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
V_R = 0 V, f = 1 MHz
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Part
Symbol
Min
Typ.
SD101A V_(BR)R
60
SD101B V_(BR)R
50
SD101C V_(BR)R
40
SD101A
I_R
SD101B
I_R
SD101C
I_R
SD101A
V_F
SD101B
V_F
SD101C
V_F
SD101A
V_F
SD101B
V_F
SD101C
V_F
SD101A
C_D
SD101B
C_D
SD101C
C_D
Unit
°C
°C
K/W
Max
Unit
V
V
V
200
nA
200
nA
200
nA
410
mV
400
mV
390
mV
1000
mV
950
mV
900
mV
2.0
pF
2.1
pF
2.2
pF
100
T_j = 125 °C
10
T_j = 100 °C
1
T_j = 75 °C
T_j = 50 °C
0.1
T_j = 25 °C
0.01
0
16204
5 10 15 20 25 30 35 40 45 50
V_R - Reverse Voltage (V)
Figure 1. Reverse Current vs. Reverse Voltage
2.0
1.8
T_j = 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16205
5 10 15 20 25 30 35 40 45 50
V_R - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 85629
Rev. 1.4, 03-Apr-06