SBL3030P Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

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SBL3030PT, SBL3040PT
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL3030PT
Thermal resistance, junction to case per diode
R_JC
1.5
SBL3040PT
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
SBL3030PT-E3/45
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
30
Resistive or Inductive Load
24
18
12
6
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
T_J = 125 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
T_J = 25 °C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
300
250
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
T_J = 125 °C
10
1
T_J = 75 °C
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 12-Jun-13
2
Document Number: 88732
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