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SB5H90_08 Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
SB5H90 & SB5H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB5H90
SB5H100
Maximum instantaneous forward voltage (1)
IF = 5.0 A
IF = 5.0 A
TA = 25 °C
TA = 125 °C
VF
0.80
0.70
Maximum reverse current at rated VR (2)
TA = 25 °C
TA = 125 °C
IR
200
10
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB5H90
Maximum thermal resistance (1)
RθJA
RθJL
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
SB5H100
25
8
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SB5H100-E3/54
1.1
54
SB5H100-E3/73
1.1
73
SB5H100HE3/54 (1)
1.1
54
SB5H100HE3/73 (1)
1.1
73
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1400
1000
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6.0
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125 150 175 200
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
240
200
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
160
120
80
40
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
For technical questions within your region, please contact one of the following: Document Number: 88722
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08