S952T Datasheet, PDF (2/6 Pages) Vishay Siliconix – MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

S952T/S952TR/S952TRW
Vishay Telefunken
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
T_amb ≤ 60 °C
Symbol
Value
Unit
V_DS
12
V
I_D
30
mA
±I_G1/G2SM
10
mA
±V_G1/G2SM
6
V
P_tot
200
mW
T_Ch
150
°C
T_stg
–55 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm³
m plated with 35 m Cu
R_thChA
450
K/W
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
m ±I_G1S = 10 A, V_G2S = V_G1S = 0
breakdown voltage
Gate 1 - source
±I_G1S = 10 mA, V_G2S = V_DS = 0
breakdown voltage
Gate 2 - source
±I_G2S = 10 mA, V_G1S = V_DS = 0
breakdown voltage
Gate 1 - source
leakage current
+V_G1S = 5 V, V_G2S = V_DS = 0
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
±V_G2S = 5 V, V_G1S = V_DS = 0
W V_DS = V_RG1 = 9 V, V_G2S = 4 V, R_G1 = 390 k
m V_DS = V_RG1 = 9 V, V_G2S = 4 V, I_D = 100 A
W m V_DS = V_RG1 = 9 V, R_G1 = 390 k , I_D = 100 A
Symbol Min Typ Max Unit
±V_(BR)DSS 15
V
±V_(BR)G1SS 7
10 V
±V_(BR)G2SS 7
10 V
+I_G1SS
20 nA
±I_G2SS
20 nA
I_DSO
7 10 14 mA
V_G1S(OFF) 0.4
1.2 V
V_G2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
W W By setting R_G1 = 300 k instead of 390 k , typical value of I_DSO will raise up to about 15 mA and improved inter-
modulation behavior will be performed.
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2 (6)
Document Number 85062
Rev. 3, 20-Jan-99