S949T_08 Datasheet, PDF (2/10 Pages) Vishay Siliconix – MOSMIC® for TV-Tuner Prestage with 9 V Supply Voltage

S949T / S949TR / S949TRW
Vishay Semiconductors
Parts Table
Part
S949T
S949TR
S949TRW
949
99R
W99
Marking
SOT-143
SOT-143R
SOT-343R
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_DS
12
V
I_D
30
mA
± I_G1/G2SM
10
mA
± V_G1/G2SM
6
V
P_tot
200
mW
T_Ch
150
°C
T_stg
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
R_thChA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Gate 1 - source breakdown
± I_G1S = 10 mA, V_G2S = V_DS = 0 ± V_(BR)G1SS
7
voltage
10
V
Gate 2 - source breakdown
± I_G2S = 10 mA, V_G1S = V_DS = 0 ± V_(BR)G2SS
7
voltage
10
V
Gate 1 - source leakage current + V_G1S = 5 V, V_G2S = V_DS = 0
+ I_G1SS
50
μA
- V_G1S = 5 V, V_G2S = V_DS = 0
- I_G1SS
100
μA
Gate 2 - source leakage current ± V_G2S = 5 V, V_G1S = V_DS = 0
± I_G2SS
20
nA
Drain current
V_DS = 9 V, V_G1S = 0, V_G2S = 4 V
I_DSS
50
500
μA
Self-biased operating current V_DS = 9 V, V_G1S = nc, V_G2S = 4 V
I_DSP
8
12
16
mA
Gate 2 - source cut-off voltage V_DS = 9 V, V_G1S = nc,
V_G2S(OFF)
1.0
V
I_D = 100 μA
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V_G1S < 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor.
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2
Document Number 85061
Rev. 1.5, 08-Sep-08