S949T Datasheet, PDF (2/9 Pages) Vishay Siliconix – MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

S949T/S949TR/S949TRW
Vishay Telefunken
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
T_amb ≤ 60 °C
Symbol
Value
Unit
V_DS
12
V
I_D
30
mA
±I_G1/G2SM
10
mA
±V_G1/G2SM
6
V
P_tot
200
mW
T_Ch
150
°C
T_stg
–55 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm³
m plated with 35 m Cu
R_thChA
450
K/W
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±I_G1S = 10 mA, V_G2S = V_DS = 0
breakdown voltage
Gate 2 - source
±I_G2S = 10 mA, V_G1S = V_DS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+V_G1S = 5 V, V_G2S = V_DS = 0
–V_G1S = 5 V, V_G2S = V_DS = 0
±V_G2S = 5 V, V_G1S = V_DS = 0
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
V_DS = 9 V, V_G1S = 0, V_G2S = 4 V
V_DS = 9 V, V_G1S = nc, V_G2S = 4 V
m V_DS = 9 V, V_G1S = nc, I_D = 100 A
Symbol Min Typ Max Unit
±V_(BR)G1SS 7
10 V
±V_(BR)G2SS 7
+I_G1SS
–I_G1SS
±I_G2SS
I_DSS
50
I_DSP
8
10 V
50 mA
100 mA
20 nA
500 mA
12 16 mA
V_G2S(OFF)
1.0
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
W ^{Switch-off at Gate 1 with VG1S < 0.7 V is feasible.}
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
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2 (9)
Document Number 85061
Rev. 3, 20-Jan-99