S886T Datasheet, PDF (2/8 Pages) Vishay Siliconix – MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage

S886T/S886TR
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±I_G1S = 10 mA, V_G2S = V_DS = 0
breakdown voltage
Gate 2 - source
±I_G2S = 10 mA, V_G1S = V_DS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+V_G1S = 6 V, V_G2S = V_DS = 0
–V_G1S = 6 V, V_G2S = V_DS = 0
±V_G2S = 6 V, V_G1S = V_DS = 0
Drain current
Self-biased
operating current
V_DS = 12 V, V_G1S = 0, V_G2S = 6 V
V_DS = 12 V, V_G1S = nc, V_G2S = 6 V
Gate 2 - source
cut-off voltage
V_DS = 12 V, V_G1S = nc, I_D = 200 mA
Symbol Min Typ Max Unit
±V_(BR)G1SS 8
12 V
±V_(BR)G2SS 8
12 V
+I_G1SS
–I_G1SS
±I_G2SS
60 mA
120 mA
20 nA
I_DSS
I_DSP
50
500 mA
8 12 16 mA
V_G2S(OFF)
1.0
V
Electrical AC Characteristics
V_DS = 12 V, V_G2S = 6 V, f = 1 MHz , T_amb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
G_S = 2 mS, G_L = 0.5 mS, f = 200 MHz
G_S = 3,3 mS, G_L = 1 mS, f = 800 MHz
V_DS = 12 V, V_G2S = 1 to 6 V, f = 800 MHz
G_S = 2 mS, G_L = 0.5 mS, f = 200 MHz
G_S = 3,3 mS, G_L = 1 mS, f = 800 MHz
Symbol Min Typ Max Unit
y_21s 25 30 35 mS
C_issg1
2.3 2.7 pF
C_rss
20
fF
C_oss
0.9
pF
G_ps
27
dB
G_ps 17.5 22
dB
DG_ps 45
dB
F
1
dB
F
1.3
dB
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V_G1S
Using open collector switching
< 0.7 V is
transistor
feasible.
(inside of
PLL),
insert
10
kW
collector
resistor.
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2 (8)
Document Number 85057
Rev. 3, 20-Jan-99