S07J-M-08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Standard Recovery Rectifier High Voltage Surface Mount

S07B-M, S07D-M, S07G-M, S07J-M, S07M-M
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Vishay Semiconductors
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air ⁽¹⁾
Operating junction and storage temperature
range
R_thJA
T_j, T_stg
Note
(1) _{Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)}
VALUE
180
- 55 to 150
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
S07B-M
V_F
S07D-M
V_F
Instaneous forward voltage
I_F = 1 A ⁽¹⁾
S07G-M
V_F
S07J-M
V_F
S07M-M
V_F
S07B-M
I_R
S07D-M
I_R
T_A = 25 °C
S07G-M
I_R
S07J-M
I_R
Maximum DC reverse current at
S07M-M
I_R
rated DC blocking voltage
S07B-M
I_R
S07D-M
I_R
T_A = 125 °C
S07G-M
I_R
S07J-M
I_R
S07M-M
I_R
S07B-M
t_rr
Reverse recovery time
S07D-M
t_rr
I_F = 0.5 A, I_R = 1 A,
I_rr = 0.25 A
S07G-M
t_rr
S07J-M
t_rr
S07M-M
t_rr
S07B-M
C_j
S07D-M
C_j
Typical capacitance
4 V, 1 MHz
S07G-M
C_j
S07J-M
C_j
S07M-M
C_j
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
TYP.
4
4
4
4
4
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1.2
Resistive or inductive load
1.0
1000
UNIT
K/W
°C
MAX.
1.1
1.1
1.1
1.1
1.1
10
10
10
10
10
50
50
50
50
50
1800
1800
1800
1800
1800
UNIT
V
V
V
V
V
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
ns
ns
ns
ns
ns
pF
pF
pF
pF
pF
0.8
TJ = 150 °C
TJ = 25 °C
0.6
TJ = 100 °C
0.4
0.2
3.0 mm x 3.0 mm 40 µm
thick copper pad areas
0
0
17375
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
17376
100
600
700
800
900
1000
Instantaneous Forward Voltage (mV)
1100
Fig. 2 - Typical Instantaneous Forward Characteristics
Rev. 1.2, 01-Aug-11
2
Document Number: 85191
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