S07B_12 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Small Signal Switching Diode, High Voltage

S07B, S07D, S07G, S07J, S07M
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
S07B
V_RRM
100
V
S07D
V_RRM
200
V
Maximum repetitive peak reverse voltage
S07G
V_RRM
400
V
S07J
V_RRM
600
V
S07M
V_RRM
1000
V
S07B
V_RMS
70
V
S07D
V_RMS
140
V
Maximum RMS voltage
S07G
V_RMS
280
V
S07J
V_RMS
420
V
S07M
V_RMS
700
V
S07B
V_DC
100
V
S07D
V_DC
200
V
Maximum DC blocking voltage
S07G
V_DC
400
V
S07J
V_DC
600
V
S07M
V_DC
1000
V
Maximum average forward rectified current
T_tp = 75 °C ¹⁾
T_A = 65 °C ¹⁾
I_F(AV)
1.5
A
I_F(AV)
0.7
A
Peak forward surge current 8.3 ms single
half sine-wave
T_L = 25 °C
I_FSM
25
A
Note:
1) _{Averaged over any 20 ms period}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air ¹⁾
Operating junction and storage
temperature range
Symbol
Value
Unit
R_thJA
180
K/W
T_J, T_STG
- 55 to + 150
°C
Note:
1) _{Mounted on epoxy substrate with 3 mm x 3 mm CU pads (≥ 40 mm thick)}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Maximum instantaneous
forward voltage
1 A ¹⁾
V_F
1.1
V
Maximum DC reverse current at
T_A = 25 °C
I_R
rated DC blocking voltage
T_A = 125 °C
I_R
10
μA
50
μA
Reverse recovery time
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
t_rr
1.8
μs
Typical capacitance at 4 V, MHz
C_j
4
pF
Note:
1) _{Pulse test: 300 µ pulse width, 1 % duty cycle}
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2
For technical questions within your region, please contact one of the following: Document Number 85733
[e-mail], [e-mail], [e-mail] _{Rev. 2.0, 20-Aug-10}