S07B_05 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Small Signal Fast Switching Diode, High Voltage

S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Test condition
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single
half sine-wave
T_tp = 75 °C¹⁾
T_A = 65 °C¹⁾
T_L = 25 °C
1) _{Averaged over any 20 ms period}
Part
S07B
S07D
S07G
S07J
S07M
S07B
S07D
S07G
S07J
S07M
S07B
S07D
S07G
S07J
S07M
Symbol
V_RRM
V_RRM
V_RRM
V_RRM
V_RRM
V_RMS
V_RMS
V_RMS
V_RMS
V_RMS
V_DC
V_DC
V_DC
V_DC
V_DC
I_F(AV)
I_F(AV)
I_FSM
Value
100
200
400
600
1000
70
140
280
420
700
100
200
400
600
1000
1.5
0.7
25
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air²⁾
Operating junction and storage
temperature range
2) _{Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick)}
Symbol
R_thJA
T_J, T_STG
Value
180
- 55 to + 150
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
Unit
K/W
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Maximum instantaneous
1.0 A³⁾
V_F
forward voltage
Maximum DC reverse current at T_A = 25 °C
I_R
rated DC blocking voltage
T_A = 125 °C
I_R
Reverse recovery time
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
Typical capacitance at 4 V, MHz
C_j
1.1
V
10
µA
50
µA
1.8
µs
4
pF
3) _{Pulse test: 300 µ pulse width, 1 % duty cycle}
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2
Document Number 85733
Rev. 1.8, 13-Apr-05