PAD1-E3 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Low-Leakage Pico-Amp Diodes

PAD/JPAD/SSTPAD Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS^a
Forward Current:
(PAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
(JPAD/SSTPAD ) . . . . . . . . . . . . . . . . . . . 10 mA
Total Device Dissipation:
(PAD)^b . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(JPAD/SSTPAD)^b . . . . . . . . . . . . . . . . 350 mW
Operation Junction Temp: (PAD) . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
(JPAD/SSTPAD )^c . . . . . . . . . . . . –55 to 150_C
Lead Temperature (¹/₁₆” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Notes:
a. T_A = 25_C unless otherwise noted.
b. Derate 2 mW/_C above 25_C.
c. Derate 2.8 mW/_C above 25_C.
SPECIFICATIONS SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min Typ^a Max
Static
Reverse Current
I_R
Reverse Breakdown Voltage
BV_R
Forward Voltage Drop
V_F
Dynamic
PAD1
–0.3
–1
V_R = –20 V
PAD5/JPAD5/SSTPAD5
PAD50/JPAD50
–1
–5
–5
–50
SSTPAD100
–10
–100
I_R = –1 mA
I_F = 1 mA
PAD1/PAD5
SSTPAD5/100
All Others
–45
–60
–30
–55
–35
–55
0.8
1.5
Reverse Capacitance
C_R
V_R = –5V, f = 1 MHz
PAD1/PAD5
All Others
0.5
0.8
1.5
2
Unit
pA
V
pF
Notes:
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
–1000
–100
Reverse Current vs. Reverse Voltage
PAD/JPAD/SSTPAD5
I _R @ 125_C
PAD1
–100
–10
Reverse Current vs. Temperature
V_R = –20 V
–10
PAD/JPAD/SSTPAD5
–1
I_R @ 25_C
–0.1
0
–6
–12
–18
V_R (V)
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4-2
PAD1
–24
–30
–1
All Others
PAD1/5
–0.1
–0.01
–55 –35 –15 5
25 45 65
T_A – Temperature (_C)
85 105 125
Document Number: 70339
S-04029—Rev. H, 04-Jun-01